8/10/2019 ls5912

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FEATURESImproved Replacement for SILICONIX, FAIRCHILD, &NATIONAL: 2N5911 & 2N5912LOW NOISE (10kHz) e n ~ 4nV/ Hz

HIGH TRANSCONDUCTANCE (100MHz) g fs 4000S

ABSOLUTE MAXIMUM RATINGS 1

@ 25 C (unless otherwise stated)

Maximum Temperatures

Storage Temperature -65 to +150 C

Operating Junction Temperature -55 to +150 C

Maximum Power Dissipation

Continuous Power Dissipation (Total) 500mW

Maximum Currents

Gate Current 50mA

Maximum Voltages

Gate to Drain -25V

Gate to Source -25V

MATCHING ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)

LS5911 LS5912 LS5912CSYMBOL CHARACTERISTIC TYP

MIN MAX MIN MAX MIN MAXUNIT CONDITIONS

GS2GS1 VV Differential Gate to SourceCutoff Voltage 10 15 40 mV V DG = 10V, I D = 5mA

TVV GS2GS1 Differential Gate to SourceCutoff Voltage Change with

Temperature20 40 40 V/C VDG = 10V, I D = 5mAT A = -55 to +125C

DSS2

DSS1

II

Gate to Source SaturationCurrent Ratio 0.95 1 0.95 1 0.95 1 % V DS = 10V, V GS = 0V

G2G1 II Differential Gate Current 20 20 20 nA VDG = 10V, I D = 5mAT A = +125C

fs2

fs1

gg

Forward TransconductanceRatio 2 0.95 1 0.95 1 0.95 1 %

VDS = 10V, I D = 5mAf = 1kHz

CMRR Common Mode RejectionRatio 85 dBVDG = 5V to 10VID = 5mA

1

2

3

4

8

7

6

5

PDIP-B

S1

D1

G1

NC

NC

G2

D2

S2

1

2

3

4

8

7

6

5

I -B

S1

D1

G1

NC

NC

G2

D2

S2

1

2

3

4

8

7

6

5

PDIP-A

S1

D1

SS

G1

G2

SS

D2

S2 1

2

3

4

8

7

6

5

SOIC-A

S1

D1

SS

G1

G2

SS

D2

S2

5

BOTTOM VIEW-78

1

2

3

6

7

D1

G1

S1

S2

D2

G2

1

3

2

SOT-23TOP VIEW

6

4

5

S2

D2

G2

G1

D1

S1

5

BOTTOM VIEW-71

1

2

3

6

7

D1

G1

S1

S2

D2

G2

Linear ntegrated Systems

LS5911 LS5912 LS5912CIMPROVED LOW NOISE

WIDEBAND MONOLITHICDUAL N-CHANNEL JFET

STATIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)

LS5911 LS5912 LS5912CSYM. CHARACTERISTIC TYPMIN MAX MIN MAX MIN MAX

UNIT CONDITIONS

BVGSS Gate to Source Breakdown Voltage -25 -25 -25 I G = -1A, V DS = 0V

VGS(off) Gate to Source Cutoff Voltage -1 -5 -1 -5 -1 -5 V DS = 10V, I D = 1nA

VGS(F) Gate to Source Forward Voltage 0.7 I G = 1mA, V DS = 0V

VGS Gate to Source Voltage -0.3 -4 -0.3 -4 -0.3 -4

V

VDG = 10V, I G = 5mA

IDSS Drain to Source Saturation Current 3 7 40 7 40 7 40 mA V DS = 10V, V GS = 0V

IGSS Gate Leakage Current -1 -50 -50 -50 V GS = -15V, V DS = 0V

IG Gate Operating Current -1 -50 -50 -50pA

VDG = 10V, I D = 5mA

Linear ntegrated Systems 4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261

8/10/2019 ls5912

2/2Linear ntegrated Systems 4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261

DYNAMIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)

LS5911 LS5912 LS5912CSYM. CHARACTERISTIC TYP

MIN MAX MIN MAX MIN MAXUNIT CONDITIONS

f = 1kHz 4000 10000 4000 10000 4000 10000g fs

ForwardTransconductance f = 100MHz 4000 10000 4000 10000 4000 10000

f = 1kHz 100 100 100gos Output Conductance

f = 100MHz 150 150 150

S V DG = 10V, I D = 5mA

C iss Input Capacitance 5 5 5

C rss Reverse Transfer Capacitance 1.2 1.2 1.2pF VDG = 10V, I D = 5mAf = 1MHz

NF Noise Figure 1 1 1 dB VDG = 10V, I D = 5mAf = 10kHz, R G = 100K

f = 100Hz 7 20 20 20 nV/Hz VDG = 10V, I D = 5mAf = 100Hze n Equivalent InputNoise Voltage f = 10kHz 4 10 10 10 nV/Hz VDG = 10V, I D = 5mAf = 10kHz

1. Absolute maximum ratings are limiting values above which serviceability may be impaired.2. Pulse Test: PW 300s Duty Cycle 3%

3. Assumes smaller value in numerator.Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for itsuse; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatiootherwise under any patent or patent rights of Linear Integrated Systems.

n or

1

2

3

4

8

7

6

5

SOIC-B

S1

D1

G1

NC

NC

G2

D2

S2

1

2

3

4

8

7

6

5

PDIP-B

S1

D1

G1

NC

NC

G2

D2

S2

Please contact the factoryregarding the availability ofoptional packages.

TO-78

0.335

0.3700.305

0.335

0.016

0.019

0.165

0.1850.040MAX.

DIM. A

0.016

0.021DIM. B

MIN. 0.500

0.200

0.100

0.100

0.0280.034

45

12 3

567

0.029

0.045

SEATING

PLANE

1

3

5

SOT-23

DIMENSIONS INMILLIMETERS

2

4

6

0.95

1.90

1.501.75

2.603.00

0.350.50

2.803.00

0.901.30

0.000.15

0.090.20

0.100.60

1

2

3

4

8

7

6

5

PDIP-A

S1

D1

SS

G1

G2

SS

D2

S2

1

2

3

4

8

7

6

5

SOIC-A

S1

D1

SS

G1

G2

SS

D2

S2

TO-71

Six Lead0.230

0.209DIA.

DIA.0.195

0.175

0.030

MAX.

0.500 MIN.

0.150

0.115

0.019

0.016

DIA.

6 LEADS

32

1 5

6

0.0460.036

45

0.0480.028

0.100

0.050

7

1

SOIC

2

3

4 5

6

7

8

DIMENSIONS ININCHES

0.22840.2440

0.1890.196

0.00750.0098

0.021

0.0140.018 0.050

0.00400.0098

0.1500.157

1

PDIP

DIMENSIONS ININCHES

2

3

4 5

6

7

8

0.1450.170

0.0600.100

0.250

0.375

0.038

0.2950.320