QRB1134-sensorInfrarojo

7/27/2019 QRB1134-sensorInfrarojo

1/5

0.210 (5.33)

0.420 (10.67)

0.328 (8.33)

0.373 (9.47) 0.703 (17.86)

0.150 (3.81)

MIN

0.603 (15.32)

0.226 (5.74)

0.150 (3.81)

NOM

FUNCTION

(C) COLLECTOR

(E) EMITTER(K) CATHODE

(A)

(K)

(E)

(C)

REFLECTIVE

SURFACE

0.020 (0.51)4X

0.300 (7.62)

(A) ANODE

WHITE

BLUE

ORANGE

WIRE COLOR

GREEN

24.0 (609.60)

MIN #26 AWG

E

S

PACKAGE DIMENSIONS

FEATURES Phototransistor output

High Sensitivity

Low cost plastic housing

#26 AWG, 24 inch PVC wire termination

Infrared transparent plastic covers for dust protection

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of .010 (.25) on all non-nominal dimensions

unless otherwise specified. A K C E

SCHEMATIC

2001 Fairchild Semiconductor CorporationDS300351 7/02/01 1 OF 4 www.fairchildsemi.com

DESCRIPTION

The QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converg-

ing optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective

object passes within its field of view. The area of the optimum response approximates a circle .200 in diameter.

PHOTOTRANSISTOR

REFLECTIVE OBJECT SENSORS

QRB1133 QRB1134


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ELECTRICAL / OPTICAL CHARACTERISTICS (TA = 25C)PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS

EMITTERIF = 40 mA VF 1.7 V

Forward Voltage

Reverse Current VR = 2.0 V IR 100 A

Peak Emission Wavelength IF = 20 mA !PE 940 nm

SENSORIC = 1 mA BVCEO 30 V

Collector-Emitter Breakdown Voltage

Emitter-Collector Breakdown Voltage IE = 0.1 mA BVECO 5 V

Collector-Emitter Dark Current VCE = 10 V, IF = 0 mA ICEO 100 nA

COUPLED

On-state Collector Current IF = 40 mA, VCE = 5 VIC(ON) mA

QRB1133 D = .150(5,6) 0.20

QRB1134 0.60

Collector-EmitterIF = 20 mA, IC = 0.5 mA VCE (SAT) 0.4 V

Saturation Voltage

Rise Time VCE = 5 V, RL = 100 " tr 8 s

Fall Time IC(ON) = 5 mA tf 8

Cross Talk IF = 40 mA, VCE = 5 V(7) ICX 1.00 A

www.fairchildsemi.com 2 OF 4 7/02/01 DS300351

Parameter Symbol Rating Units

Operating Temperature TOPR -40 to +85 C

Storage Temperature TSTG -40 to +85 C

Soldering Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec C

Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec C

EMITTER

Continuous Forward Current IF 50 mA

Reverse Voltage VR 5 V

Power Dissipation(1) PD 100 mW

SENSOR

Collector-Emitter Voltage VCEO 30 V

Emitter-Collector Voltage VECO 50 V

Collector Current IC 20 mA

Power Dissipation(1) PD 100 mW

ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified)

NOTES1. Derate power dissipation linearly 1.67 mW/C above 25C.2. RMA flux is recommended.3. Methanol or isopropyl alcohols are recommended as cleaning agents.4. Soldering iron 1/16 (1.6mm) minimum from housing.5. D is the distance from the assembly face to the reflective surface.6. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface.7. Cross talk is the photo current measured with current to the input diode and no reflecting surface.

PHOTOTRANSISTOR


QRB1133 QRB1134


3/5

1.60 10.0

1.00

1.00

0.8

0.6

0.4

0.2

0

0.10

0.01

.001

102

101

10

1.0

10-1

10-2

10-3

1.40

1.20

1.00

0.80

0.60

0.40

0.20

0.1 0.0 -50 -25 0 25 50 7510 20 30 40 501.0 10 100

Fig. 1 Forward Voltagevs. Forward Current

Fig. 2 Normalized Collector Currentvs. Forward Current

Fig. 3 Normalized Collector Currentvs. Temperature

Fig. 5 Normalized Collector Currentvs. Distance

IF- FORWARD CURRENT (mA) IF- FORWARD CURRENT (mA) TA- AMBIENT TEMPERATURE (C)

DISTANCE IN MILS

Fig. 4 Normalized Collector Dark

Current vs. Temperature

TA- AMBIENT TEMPERATURE (C)

VF-F

ORWARDVOLTAGE(V)

ICEO-COLLECTORDARKCURR

ENT

IC-CO

LLECTORCURRENT(mA)

IC-CO

LLECTORCURRENT(mA)

VCE= 5 VD = .05"

IF= 10 m,AVCE= 5 V

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0 50

50 -25 0 25 50 75 100

NORMALIZED

COLLECTOR

CURRENT(m

A)

IF= 20 m,AVCE= 5 V

100 150 200 250 300 350 400 450 500

VCE= 10 V

DS300351 7/02/01 3 OF 4 www.fairchildsemi.com

TYPICAL PERFORMANCE CURVES

PHOTOTRANSISTOR


QRB1133 QRB1134


4/5www.fairchildsemi.com 4 OF 4 7/02/01 DS300351

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME

ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF

OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD

SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgicalimplant into the body,or (b) support or sustain life,

and (c) whose failure to perform when properly

used in accordance with instructions for use provided

in labeling, can be reasonably expected to result in a

significant injury of the user.

2. A critical component in any component of a life support

device or system whose failure to perform can bereasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PHOTOTRANSISTOR


QRB1133 QRB1134


5/5

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QRB1134-sensorInfrarojo