Si100 c4× 4

1

Si001550°C 670°C c4 × 4 00
12 , 0 0, 12 2× 1 S
B c4× 4
1
c4× 4
73 °C c4
× 2
2 Si100 0.135nm
2Si100 ± 1°
3,4S A S
B
S A S
A
2,5
c4× 22× 1 2
6,7
8 STM 2,91
100 [ /sec] 3000V
c4× 4 S B 10
c4× 4
11-13
2× 1
LEED2× 1 c4× 4
00 12 , 0 0, 12

0.525± 0.025mm [100]
± 1° Sb n 0.02 Ω cm
11.5mm 3.0mm
14
HNO3 5
3 HF 20
5 Si100
15 H2O2 10 H2SO4
5.0 × 10-11mbr
Mo
700°C 24 Si
1200 °C 1.0
× 10-9 mbr
16, 17
960°C 1050 °C 2
m/e 162844
SiO2 2.0 × 10 -10 mbr XPS


3
3-1
LEED 1

afractional order 12 , 0 12 , 0 0, 12 0, 12
1 LEED
2
540°C c 14 , 14 12 , 12

18 g 632°C
1
aRT 64eV b280°C 50 eV c540°C 53eV
d549°C 53eV e597°C 53eV f615°C 52eV
g632°C 49eV h659°C 49 eV i690°C 50eV
19
14 , 14 c4× 4 690°C
c4× 4
2× 11× 2 2 c4× 4
599°C

200
sa 3
registryn n=234
2 n=1 25eV

n=2 70 eV
25eV
20 Si100 c4× 4
2 00
3 00
21
1c 540°C c4× 450eV
25eV632°C
5.72-1 7.92-1 2.8
Si100 2c4× 4
690°C

4
c4× 4500°C
c4× 4690°C
n=3 100°C
400°C n= 2

c4× 4690°C
n=420
1 × 2 0, 12
2× 1 12 , 0
5 0, 12 12 , 0
23
5 0, 12
400°C 3-2 00


12 , 0 460°Cc4× 4500°C
c4× 4 0, 12
c4× 4
4

0, 12 12 , 0 1× 2
2× 1
0, 12 400°C c4× 4
c4× 4 0, 12
1× 2
12 , 0 0, 12
c4× 4
620°C2× 1
1× 2
S B 1× 2


21
c4× 41× 22× 1
24 Si100 c4× 4
c4× 4
S B S
A Si

S B 65mV 22 S
A

800°C2× 11× 2
Asymmetric Symmetric


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