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datasheet fets mosfets
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STD10PF06P - CHANNEL 60V - 0.18 - 10A TO-252
STripFET POWER MOSFET
n TYPICAL RDS(on) = 0.18 n EXCEPTIONAL dv/dt CAPABILITYn 100% AVALANCHE TESTEDn LOW GATE CHARGEn APPLICATION ORIENTED
CHARACTERIZATIONn ADD SUFFIX T4 FOR ORDERING IN TAPE
& REEL
DESCRIPTIONThis Power MOSFET is the latest development ofSTMicroelectronics unique Single FeatureSize strip-based process. The resulting transi-stor shows extremely high packing density for lowon-resistance, rugged avalanche characteristicsand less critical alignment steps therefore a re-markable manufacturing reproducibility.
APPLICATIONSn MOTOR CONTROLn DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
April 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value UnitVDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain- gate Voltage (RGS = 20 k) 60 VVGS Gate-source Voltage 20 VID Drain Current (continuous) at Tc = 25 oC 10 AID Drain Current (continuous) at Tc = 100 oC 7 A
IDM() Drain Current (pulsed) 40 APtot Total Dissipation at Tc = 25 oC 40 W
Derating Factor 0.27 W/oCdv/dt Peak Diode Recovery voltage slope 6 V/nsTstg Storage Temperature -65 to 175 oCTj Max. Operating Junction Temperature 175 oC
() Pulse width limited by safe operating area ( 1) ISD 10 A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAXNote: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
TYPE VDSS RDS(o n) IDSTD10PF06 60 V < 0.20 10 A
13
DPAKTO-252
(Suffix T4)
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THERMAL DATA
Rthj -caseRthj -ambRthc-sink
T l
Thermal Resistance Junction-case MaxThermal Resistance Junction-ambient MaxThermal Resistance Case-sink TypMaximum Lead Temperature For Soldering Purpose
3.751001.5275
oC/WoC/WoC/W
oC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value UnitIAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)10 A
EAS Single Pulse Avalanche Energy(starting Tj = 25 oC, ID = IAR, VDD = 25V)
50 mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwisespecified)OFF
Symbol Parameter Test Conditions Min. Typ. Max. UnitV(BR)DSS Drain-source
Breakdown VoltageID = 250 A VGS = 0 60 V
IDSS Zero Gate VoltageDrain Current (VGS = 0)
VDS = Max RatingVDS = Max Rating Tc = 125 oC
110
AA
IGSS Gate-body LeakageCurrent (VDS = 0)
VGS = 20 V 100 nA
ON ()Symbol Parameter Test Conditions Min. Typ. Max. UnitVGS(th) Gate Threshold Voltage VDS = VGS ID = 250 A 2 3.4 4 VRDS(on) Static Drain-source On
ResistanceVGS = 10V ID = 5 A 0.18 0.20
ID(o n) On State Drain Current VDS > ID(o n) x RDS(on )maxVGS = 10 V
10 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unitgfs () Forward
TransconductanceVDS > ID(o n) x RDS(on )max ID = 5 A 2 5 S
CissCossCrss
Input CapacitanceOutput CapacitanceReverse TransferCapacitance
VDS = 25 V f = 1 MHz VGS = 0 85023075
pFpFpF
STD10PF06
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ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unittd(on)
trTurn-on Delay TimeRise Time
VDD = 30 V ID = 6 ARG = 4.7 VGS = 10 V(Resistive Load, see fig. 3)
2040
nsns
QgQgsQgd
Total Gate ChargeGate-Source ChargeGate-Drain Charge
VDD = 48 V ID = 12 A VGS = 10 V 1646
21 nCnCnC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unittd(of f)
tfTurn-off Delay TimeFall Time
VDD = 30 V ID = 6 ARG = 4.7 VGS = 10 V(Resistive Load, see fig. 3)
4010
nsns
tr (Voff)tftc
Off-voltage Rise TimeFall TimeCross-over Time
VDD = 48 V ID = 12 ARG = 4.7 VGS = 10 V(Induct ive Load, see fig. 5)
101730
nsnsns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. UnitISD
ISDM ()Source-drain CurrentSource-drain Current(pulsed)
1040
AA
VSD () Forward On Voltage ISD = 10 A VGS = 0 2.5 Vtrr
Qrr
IRRM
Reverse RecoveryTimeReverse RecoveryChargeReverse RecoveryCurrent
ISD = 12 A di/dt = 100 A/sVDD = 30 V Tj = 150 oC(see test circuit, f ig. 5)
100
260
5.2
ns
C
A
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 %() Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
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Output Characteristics
Transconductance
Gate Charge vs Gate-sourceVoltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
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Normalized Gate Threshold Voltage vsTemperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
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Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits ForResistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
STD10PF06
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DIM.mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
==
DL2
L4
13
==
B
E
==
B2 G2
A
C2
C
H
A1
DETAIL A
A2
DETAIL A
TO-252 (DPAK) MECHANICAL DATA
0068772-B
STD10PF06
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license isgranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication aresubject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics Printed in Italy All Rights ReservedSTMicroelectronics GROUP OF COMPANIES
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STD10PF06
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