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1/2
FEATURESImproved Replacement for SILICONIX, FAIRCHILD, &NATIONAL: 2N5911 & 2N5912LOW NOISE (10kHz) e n ~ 4nV/ Hz
HIGH TRANSCONDUCTANCE (100MHz) g fs 4000S
ABSOLUTE MAXIMUM RATINGS 1
@ 25 C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -65 to +150 C
Operating Junction Temperature -55 to +150 C
Maximum Power Dissipation
Continuous Power Dissipation (Total) 500mW
Maximum Currents
Gate Current 50mA
Maximum Voltages
Gate to Drain -25V
Gate to Source -25V
MATCHING ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)
LS5911 LS5912 LS5912CSYMBOL CHARACTERISTIC TYP
MIN MAX MIN MAX MIN MAXUNIT CONDITIONS
GS2GS1 VV Differential Gate to SourceCutoff Voltage 10 15 40 mV V DG = 10V, I D = 5mA
TVV GS2GS1 Differential Gate to SourceCutoff Voltage Change with
Temperature20 40 40 V/C VDG = 10V, I D = 5mAT A = -55 to +125C
DSS2
DSS1
II
Gate to Source SaturationCurrent Ratio 0.95 1 0.95 1 0.95 1 % V DS = 10V, V GS = 0V
G2G1 II Differential Gate Current 20 20 20 nA VDG = 10V, I D = 5mAT A = +125C
fs2
fs1
gg
Forward TransconductanceRatio 2 0.95 1 0.95 1 0.95 1 %
VDS = 10V, I D = 5mAf = 1kHz
CMRR Common Mode RejectionRatio 85 dBVDG = 5V to 10VID = 5mA
1
2
3
4
8
7
6
5
PDIP-B
S1
D1
G1
NC
NC
G2
D2
S2
1
2
3
4
8
7
6
5
I -B
S1
D1
G1
NC
NC
G2
D2
S2
1
2
3
4
8
7
6
5
PDIP-A
S1
D1
SS
G1
G2
SS
D2
S2 1
2
3
4
8
7
6
5
SOIC-A
S1
D1
SS
G1
G2
SS
D2
S2
5
BOTTOM VIEW-78
1
2
3
6
7
D1
G1
S1
S2
D2
G2
1
3
2
SOT-23TOP VIEW
6
4
5
S2
D2
G2
G1
D1
S1
5
BOTTOM VIEW-71
1
2
3
6
7
D1
G1
S1
S2
D2
G2
Linear ntegrated Systems
LS5911 LS5912 LS5912CIMPROVED LOW NOISE
WIDEBAND MONOLITHICDUAL N-CHANNEL JFET
STATIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)
LS5911 LS5912 LS5912CSYM. CHARACTERISTIC TYPMIN MAX MIN MAX MIN MAX
UNIT CONDITIONS
BVGSS Gate to Source Breakdown Voltage -25 -25 -25 I G = -1A, V DS = 0V
VGS(off) Gate to Source Cutoff Voltage -1 -5 -1 -5 -1 -5 V DS = 10V, I D = 1nA
VGS(F) Gate to Source Forward Voltage 0.7 I G = 1mA, V DS = 0V
VGS Gate to Source Voltage -0.3 -4 -0.3 -4 -0.3 -4
V
VDG = 10V, I G = 5mA
IDSS Drain to Source Saturation Current 3 7 40 7 40 7 40 mA V DS = 10V, V GS = 0V
IGSS Gate Leakage Current -1 -50 -50 -50 V GS = -15V, V DS = 0V
IG Gate Operating Current -1 -50 -50 -50pA
VDG = 10V, I D = 5mA
Linear ntegrated Systems 4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
8/10/2019 ls5912
2/2Linear ntegrated Systems 4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
DYNAMIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)
LS5911 LS5912 LS5912CSYM. CHARACTERISTIC TYP
MIN MAX MIN MAX MIN MAXUNIT CONDITIONS
f = 1kHz 4000 10000 4000 10000 4000 10000g fs
ForwardTransconductance f = 100MHz 4000 10000 4000 10000 4000 10000
f = 1kHz 100 100 100gos Output Conductance
f = 100MHz 150 150 150
S V DG = 10V, I D = 5mA
C iss Input Capacitance 5 5 5
C rss Reverse Transfer Capacitance 1.2 1.2 1.2pF VDG = 10V, I D = 5mAf = 1MHz
NF Noise Figure 1 1 1 dB VDG = 10V, I D = 5mAf = 10kHz, R G = 100K
f = 100Hz 7 20 20 20 nV/Hz VDG = 10V, I D = 5mAf = 100Hze n Equivalent InputNoise Voltage f = 10kHz 4 10 10 10 nV/Hz VDG = 10V, I D = 5mAf = 10kHz
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.2. Pulse Test: PW 300s Duty Cycle 3%
3. Assumes smaller value in numerator.Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for itsuse; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatiootherwise under any patent or patent rights of Linear Integrated Systems.
n or
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8
7
6
5
SOIC-B
S1
D1
G1
NC
NC
G2
D2
S2
1
2
3
4
8
7
6
5
PDIP-B
S1
D1
G1
NC
NC
G2
D2
S2
Please contact the factoryregarding the availability ofoptional packages.
TO-78
0.335
0.3700.305
0.335
0.016
0.019
0.165
0.1850.040MAX.
DIM. A
0.016
0.021DIM. B
MIN. 0.500
0.200
0.100
0.100
0.0280.034
45
12 3
567
0.029
0.045
SEATING
PLANE
1
3
5
SOT-23
DIMENSIONS INMILLIMETERS
2
4
6
0.95
1.90
1.501.75
2.603.00
0.350.50
2.803.00
0.901.30
0.000.15
0.090.20
0.100.60
1
2
3
4
8
7
6
5
PDIP-A
S1
D1
SS
G1
G2
SS
D2
S2
1
2
3
4
8
7
6
5
SOIC-A
S1
D1
SS
G1
G2
SS
D2
S2
TO-71
Six Lead0.230
0.209DIA.
DIA.0.195
0.175
0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016
DIA.
6 LEADS
32
1 5
6
0.0460.036
45
0.0480.028
0.100
0.050
7
1
SOIC
2
3
4 5
6
7
8
DIMENSIONS ININCHES
0.22840.2440
0.1890.196
0.00750.0098
0.021
0.0140.018 0.050
0.00400.0098
0.1500.157
1
PDIP
DIMENSIONS ININCHES
2
3
4 5
6
7
8
0.1450.170
0.0600.100
0.250
0.375
0.038
0.2950.320
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