AP2301GN

7/27/2019 AP2301GN

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Advanced Power P-CHANNEL ENHANCEMENT MODE

Electronics Corp. POWER MOSFET

Simple Drive Requirement BVDSS -20V

Small Package Outline RDS(ON) 130mΩ

Surface Mount Device ID - 2.6A

Description

Absolute Maximum Ratings

Symbol UnitsVDS V

VGS V

ID@T A=25 A

ID@T A=70 A

IDM A

PD@T A=25 W

W/

TSTG

TJ

Symbol Value Unit

Rthj-a Maximum Thermal Resistance, Junction-ambient3

90 /W

Data and specifications subject to change without notice

200902047

Parameter Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current3

-55 to 150

Linear Derating Factor

1.38

-55 to 150

Thermal DataParameter

Total Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

Continuous Drain Current3

-2.1

Pulsed Drain Current1

-10

1

AP2301GN

Rating- 20

+12

-2.6

0.01

RoHS-compliant Product

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

low on-resistance and cost-effectiveness.

The SOT-23 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

G

D

S

D

G

S

SOT-23

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Electrical Characteristics@T j=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V

RDS(ON) Static Drain-Source On-Resistance2

VGS=-5V, ID=-2.8A - - 130 mΩ

VGS=-2.8V, ID=-2.0A - - 190 mΩ

VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - -1.25 V

gfs Forward Transconductance VDS=-5V, ID=-2A - 4 - S

IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA

Drain-Source Leakage Current (T j=70oC) VDS=-16V, VGS=0V - - -10 uA

IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nAQg Total Gate Charge

2ID=-2A - 5 9 nC

Qgs Gate-Source Charge VDS=-16V - 1 - nC

Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 2 - nC

td(on) Turn-on Delay Time2

VDS=-10V - 6 - ns

tr Rise Time ID=-1A - 17 - ns

td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 16 - ns

tf Fall Time RD=10Ω - 5 - ns

Ciss Input Capacitance VGS=0V - 270 - pF

Coss Output Capacitance VDS=-20V - 70 - pFCrss Reverse Transfer Capacitance f=1.0MHz - 55 - pF

Rg Gate Resistance f=1.0MHz - 10 15 Ω

Source-Drain DiodeSymbol Parameter Test Conditions Min. Typ. Max. Units

IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -1 A

ISM Pulsed Source Current ( Body Diode )1 - - -10 A

VSD Forward On Voltage2

T j=25, IS=-1.6A, VGS=0V - - -1.2 V

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Surface mounted on 1 in2 copper pad of FR4 board ; 270/W when mounted on min. copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2

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Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3

AP2301GN

0

2

4

6

8

10

0 1 2 3 4 5 6

-V DS , Drain -to-Source Voltage (V)

- I D ,

D r a

i n C u r r e n

t ( A )

T A =25 o C V GS = -5V

V GS = -4V

V GS = -3V

V GS = -2V

0

2

4

6

8

10

0 1 2 3 4 5 6

-V DS , Drai n-to-Source Voltage (V)

- I D ,

D r a

i n C u r r e n

t ( A )

T A =150 o C V GS = -5V

V GS = -4V

V GS = -3V

V GS = -2V

80

120

160

200

240

0 2 4 6 8 10

-V GS , Gate-to-Source Voltage (V)

R D S ( O N )

( )

I D = -2A

T A =25

0.6

0.8

1

1.2

1.4

1.6

1.8

-50 0 50 100 150

T j , Juncti on Temperatur e ( o C)

N o r m a

l i z e

d R D S ( O N )

I D = -2.8A

V GS = -5V

0

1

10

0.1 0.3 0.5 0.7 0.9 1.1 1.3

-V SD , Source-to-Drain Voltage (V)

- I S ( A ) T j =25

o C T j =150

o C

0.0

0.5

1.0

1.5

-50 0 50 100 150

T j , Junction Temperatu re ( o C)

N o r m a

l i z e

d - V G S ( t h )

( V )

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Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

4

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

t , Pul se Width (s)

N o r m a

l i z e d

T h e r m a

l R e s p o n s e

( R t h j a

)

0.01

0.05

0.1

0.2

Duty factor=0.5

PDM

Duty factor = t/T

Peak T j = PDM x R thja + Ta

R thja = 270/W

t

T

Single Pulse

0

1

2

3

4

5

0 1 2 3 4 5 6

Q G , Total Gate Charge (nC)

- V G S ,

G a

t e t o S o u r c e

V o

l t a g e

( V )I D = -2A

V DS = -16V

10

100

1000

1 5 9 13 17 21 25

-V DS , D rain -to-Source Voltage (V)

C ( p F )

f=1.0MH

C iss

C oss

C rss

Q

VG

QGS QGD

QG

Charge

-4.5V

0.01

0.1

1

10

100

0.1 1 10 100

-V DS , D rain -to-Source Voltage (V)

- I D ( A )

1ms

10ms

100ms

1s

DC

T A =25°C

Single Pulse

td(on)tr td(off)tf

VDS

VGS

10%

90%

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AP2301GN