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Bi ging mn

K Thut Cm Bin (sensor)

1

Hoang Si Hong

----2011----

Faculty of Electrical Eng., Hanoi Univ. of Science and Technology (HUST),

Hanoi, VietNam

Hoang Si Hong-HUST

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Ni dung mn hc v mc ch

Ni dungChapter 1: Khi nim chung v Cm bin (2b) Chapter 2: Cm bin in tr (2b) Chng 3: Cm bin nhit in (2b) Chng 4: Cm bin quang (2b)Chng 5: Cm bin tnh in (2b) Chng 6: Cm bin Hall v ho in Chng 6: Cm bin v PLC(1b)

Mc ch: nm c cu to, nguyn l hot ng v ng dng cacc loi cm bin thng dng trong cng nghip v i sng. Nmc xu th pht trin chung ca cng ngh cm bin trn th gii.

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Chng 1:Khi nim chung v cm bin

Gio trnh v ti liu tham kho

Khi nim chung

Lch s pht trin

c im v phn loi

ng dng

Vt liu v cc hiu ng c bnCng ngh sn xut

Hoang Si Hong-HUST 3

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Gio trnh v ti liu tham kho

Sch:

- K thut o lng cc i lng in tp 2- Phm Thng Hn, NguynTrng Qu.

- Cc b cm bin trong o lng-L Vn Doanh

- Cc b cm bin-Nguyn Tng Ph- o lng in v cc b cm bin: Ng.V.Ho v Hong S Hng

Bi ging v website:

- Bi ging k thut cm bin-Hong S Hng.

- Bi ging Cm bin v k thut o:P.T.N.Yn, Ng.T.L.Hng

- Bi ging MEMs ITIMS - BKHN

- Website: sciendirect/sensors and actuators A and B

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1.1. Cc khi nim v nh ngha

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X CB BCH TBY Ych

Cm bin (CB): l chuyn i thc hin chc nng bin i i lng khngin thnh i lng in. V d nh bin p sut, nhit , lu lng, vntcthnh tn hiu in (mv. V, mA)

Chuyn i o lng: l cc chuyn i i lng in ny thnh i lngkhc i l-ng khng in X -c -a qua mt cm bin Y. Thng th-ng Y l

mt i l-ng in i l-ng in c th l U, I, f (cm bin pht in), hoc thng s R, L, C

(cm bin thng s). Y -c -a vo b chun ho bin thnh Y

cht-ng thch vi thit b o TB.

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1.1. Cc khi nim v nh ngha

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Cc b cm bin thng c nh ngha theo ngha rng lthit b cm nhn v p ng vi cc tn hiu v kch thch.

Ni cch khc cm bin chnh l cc chuyn i o lng scp c t trong mt v hp c kch thc hnh dng rtkhc nhau v c chun ho ph hp vi s dng trongthc t (lp t, c tnh, cu to..)

Vi tr ca cm bin:

Cm bin ng vai tr quan trng trong h thng o lngv K hin i. N quyt nh vic c th K t ng hay TH cc qutrnh hay khng

Quyt nh chnh xc v cht lng ca h thng.

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1.2.Phn loi

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Phn loi theo kch thc: cm bin truyn thng v vi cm bin (MEMSv NEMS)

Phn loi theo mi trng: cm bin o tip xc v khng tip xc

Phn loi theo tnh nng

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Phn loi cm bin th ng

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Phn loi cm bin tch cc

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Phn loi cm bin theo kch thc

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V d v cm bin truyn thng

V d v vi cm bin

Cm bin l thit b chuyni mt tn hiu u vokhng in (vt l v hohc) thnh mt tn hiu rac tnh cht in

Cm

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Khi nim vi cm bin

Vi cm bin (microsensor) l cm bin c sn xut trn c scng

ngh vi c in tvi k thut x l silicon truyn thng c kch thc

vt l rt nh (mm, micro, nano..).

Cm bin thng minh:

11Hoang Si Hong-HUST

B bin truyn (Tranducer)

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Phn loi theo phng php tip xc

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12

3

4

5

6

CHTH

CHTH

i tng oMUX ADC Vi X l Hin th

Ngun ngoi

CB1: o tip xc vi i tng v khng cn CHTH (ch ng). CB2 otip xc ch ng v cn chun ho tn hiu. CB3 o ko tip xc, ko cnCHTH v ch ng. CB4 o ko tip xc, ch ng v cn CHTH. CB5 otip xc, th ng (cn ngun ngoi). CB6 o mi trng.

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Phn loi theo tnh nng

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Cm bin tng tCm bin thng minh

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1.3.ng dng- ng dng theo tnh nng

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ng dng truyn thng

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ng dng ca cm bin hin i

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tMy bay

Tu thuNh thng minh

Thit b thng minh

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Cm bin trong h thng o lng v iukhin

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Nhc li mt s khi nim c bn v in cnthit cho cm bin

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S chuyn i v ng dng

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1.4. c tnh chung ca mt cm bin

-p ng (response)- nhy (sensitivity)

- la chn (selectivity)- Gii hn pht hin (detection limit)- phn gii (Resolution)

- Ngng nhy- Tc p ng (speed of response)- tr (hysteresic)- lp li (repeatability)- phi tuyn (Nonlinearity)

- n nh (stability)- Kh nng chu qu ti

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nhy (Sen) v tr (H) ca cm bin

Nguyn nhn: dos thay i trongcu trc vt liuhoc ma st

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bo ho (Sa) v kh nng lp li (A)

n mt gi tr ngng no y, s tng thmkch thch u vo khng to ra gi tr ra nhmong mun.

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la chn (Sel)

Mt vt liu nhy c th p ng ng thi vi nhiu kh trongmt hn hp kh. V d vi c tnh trn, th cm bin c chn la cao vi kh C2H5OH.

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H s phi tuyn

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Khong o, ngng nhy v kh nng phn ly

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c tnh ng ca cm bin

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