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7/24/2019 BU4522AX
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Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4522AX
GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of colour TV receivers and PC monitors.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 VVCEO Collector-emitter voltage (open base) - 800 VIC Collector current (DC) - 10 AICM Collector current peak value - 25 AP
totTotal power dissipation T
hs ≤ 25 ˚C - 45 W
VCEsat Collector-emitter saturation voltage IC = 7 A; IB = 1.75 A - 3.0 VICsat Collector saturation current (Fig 17) f = 16 kHz 7 - A
f = 64 kHz 6 - Atf Fall time ICsat = 7 A; f = 16 kHz 285 400 ns
ICsat = 6 A; f = 64 kHz 170 230 ns
PINNING - SOT399 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
LIMITING VALUESLimiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 VVCEO Collector-emitter voltage (open base) - 800 VIC Collector current (DC) - 10 AICM Collector current peak value - 25 A
IB Base current (DC) - 6 AIBM Base current peak value - 9 A-IBM Reverse base current peak value 1 - 6 APtot Total power dissipation Ths ≤ 25 ˚C - 45 WTstg Storage temperature -55 150 ˚CT j Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W
Rth j-a Junction to ambient in free air 35 - K/W
case
1 2 3
b
c
e
1 Turn-off current.
December 1997 1 Rev 1.000
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Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4522AX
ISOLATION LIMITING VALUE & CHARACTERISTICThs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 Vthree terminals to externalheatsink
Cisol Capacitance from T2 to external f = 1 MHz - 22 - pFheatsink
STATIC CHARACTERISTICSThs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 1.0 mAICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
T j = 125 ˚CIEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mABVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - VVCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mHVCEsat Collector-emitter saturation voltage IC = 7 A; IB = 1.75 A - - 3.0 VVBEsat Base-emitter saturation voltage IC = 7 A; IB = 1.75 A 0.85 0.94 1.03 VhFE DC current gain IC = 1 A; VCE = 5 V - 10 -hFE IC = 7 A; VCE = 5 V 4.2 5.8 7.3
DYNAMIC CHARACTERISTICSThs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (16 kHz line f = 16 kHz; ICsat = 7 A; IB1 = 1.4 A;deflection circuit) (IB2 = -3.5 A)
ts Turn-off storage time 3.5 4.3 µstf Turn-off fall time 285 400 ns
Switching times (64 kHz line f = 64 kHz; ICsat = 6 A; IB1 = 1.2 A;deflection circuit) (IB2 = -3.6 A)
ts Turn-off storage time 2.3 2.7 µstf Turn-off fall time 170 230 ns
2 Measured with half sine-wave voltage (curve tracer).
December 1997 2 Rev 1.000
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Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4522AX
Fig.1. Test circuit for V CEOsust .
Fig.2. Oscilloscope display for V CEOsust .
Fig.3. Switching times waveforms (16 kHz).
Fig.4. Switching times waveforms (64 kHz).
Fig.5. Switching times definitions.
Fig.6. Switching times test circuit .
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V 30-60 Hz
100R V
ICsat
IB1
16 us
6.5 us 5 us
t
t
t
TRANSISTOR
DIODE I C
I B
CE
IB2
VCE / V min
VCEOsust
IC / mA
100
200
250
0
ICsat
90 %
10 %
tf
ts
IB1
IC
IB
t
t
- IB2
IC
IB
VCE
ICsat
IB1
64us
26us 20us
t
t
t
TRANSISTOR
DIODE
IB2
+ 150 v nominal
adjust for ICsat
Lc
Cfb T.U.T.LB IBend
-VBB
December 1997 3 Rev 1.000
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Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4522AX
Fig.7. High and low DC current gain.
Fig.8. High and low DC current gain.
Fig.9. Typical collector-emitter saturation voltage.
Fig.10. Typical base-emitter saturation voltage.
Fig.11. Typical collector storage and fall time.I C =7 A; T j = 85˚C; f = 16kHz
Fig.12. Typical collector storage and fall time.I C = 6 A; T j = 85˚C; f = 64 kHz
0.01 0.1 1 10 1001
10
100
IC / A
hFE
Ths = 25 C
Ths = 85 CVCE = 1 V
BU4522AF/X
0 1 2 3 40.6
0.7
0.8
0.9
1
1.1
1.2
1.3
IB / A
VBEsat \ V
Ths = 25 C
Ths = 85 C
IC = 7 A
IC = 6 A
0.01 0.1 1 10 1001
10
100
IC / A
h F E
Ths = 25 C
Ths = 85 CVCE = 5 V
BU4522AF/X
0.5 1 1.5 2
1
2
3
4
5
IBend / A
ts/tf/ us BU4522AF/X 16kHz
ICsat = 7 AThs = 85 CFreq = 16 kHz
00
0.1 1 10 1000.01
0.1
1
10
IC / A
VCEsat (V) BU4522AF/X
Ths = 25 C
Ths = 85 C
IC/IB = 5
0 0.5 1 1.5 20
1
2
3
4
5
IB / A
ts/tf/ us BU4522AF/X 64kHz
ICsat = 6 AThs = 85 CFreq = 64 kHz
December 1997 4 Rev 1.000
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Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4522AX
Fig.13. Normalised power dissipation.PD% = 100 ⋅P D /P D 25˚C
Fig.14. Transient thermal impedance.
Fig.15. Test Circuit RBSOA.
Fig.16. Reverse bias safe operating area. T j ≤ T jmax
Fig.17. I Csat during normal running vs. frequency of operation for optimum performance
0 20 40 60 80 100 120 140
Ths / C
PD% Normalised Power Derating 120
110
100
90
80
70
60
50
40
30
20
100
with heatsink compound
BU2522AF
0
30
20
10
0500 1000 1500
VCE / V
IC / A
1.0E-07 1.0E-05 1.0E-03 1.0E-01 1.0E-010.001
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
t / s
Zth / (K/W) BU4522AF
D =t p t p
T
T P
t
D
0 20 40 60 80 1000
2
4
6
8
10
Horizontal frequency (kHz)
Ic(sat) (A)
10 30 50 70 90
1
3
5
7
9
LB IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
December 1997 5 Rev 1.000
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Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4522AX
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.88 g
Fig.18. SOT399; The seating plane is electrically isolated from all terminals.
Notes1. Refer to mounting instructions for F-pack envelopes.2. Epoxy meets UL94 V0 at 1/8".
4.5
16.0 max
0.7
10.0
5.1
27
max
18.1
min 4.5
2.2 max
1.1
0.4 M
5.45 5.45
25
25.1
3.0
25.7
5.8 max
3.3
0.95 max 2
3.3
22.5
max
December 1997 6 Rev 1.000
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Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4522AX
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.
December 1997 7 Rev 1.000