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ABB's reputation in power semiconductors is undisputed and based
on many years of success in supplying
high power semiconductors used in many applications across all
high power industries. The impressive product
portfolio includes a wide range of devices such as Thyristors,
Diodes, GTOs, IGCTs. Since 1999, ABB has
additionally produced its own range of state-of-the-art planar
IGBT and diode devices in innovative packages
for demanding Industrial, Traction and Energy Management
markets. In this brochure, ABB Switzerland Ltd,
Semiconductors introduces its range of high performance IGBT and
Diode chips which are designed and
manufactured in our wafer facility in Lenzburg, Switzerland.
IGBT and Diode chips from
ABB Switzerland Ltd, Semiconductors
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Product Description
The lowest voltage chips currently produced are 1200V diodes as
well as standard 1200V NPT (Non Punch
Through) IGBTs and the new SPT (Soft Punch Through) IGBTs which
offer the lowest saturation voltage Vce(sat)
available today. SPT technology is also used for the 1700V IGBTs
and development is currently underway to
standardise the SPT concept for the whole voltage range up to
7500V. This will ultimately allow the most com-
petitive solutions for most power conversion applications. For
all IGBT dies, matching fast diode chips with very
low on-state and switching losses combined with soft recovery
are also available. The IGBT and diode chips are
especially designed to meet the demanding requirements of
parallel connection and therefore have positive
on-state temperature coefficients. This ensures good current
sharing and tracking between parallel connected
dies. The IGBT and diode chips offered are mainly suitable for
solder mount-down and wire bonding in many
types of packages provided by the end user. Other chips suitable
for pressure assembly (in press-packs) are
also available on request. All chips are employed in a variety
of ABB module products and their performance in
the package can be evaluated by referring to the relevant
packaged product data sheets. Particular attention
has been paid to quality and reliability, applying ABBs long
experience in high reliability applications.
Testing, Shipment, Storing and Handling
Chips are normally 100% probed for static electrical parameters
before shipment. The parameters which can
not be measured during wafer testing (such as dynamic
characteristics) are guaranteed by the design quali-
fication tests and are monitored on a batch basis. Additionally,
a 100% visual inspection is performed at wafer
labelling stage just prior to packing. ABB offers different
shipment methods for supplying chips to meet all
customers needs. Chips can be supplied in the industry standard
waffle pack trays for sawn and picked die.
Alternatively, wafers can be supplied sawn (with ring frame) on
sticky foil, or as unsawn. In the case of wafer
shipments, rejected dies are inked during probe testing as part
of the test process and are easily identified.
Correct chip assembly ensuring high yields requires high levels
of cleanliness and chips must therefore be
handled with extreme caution. All chips should be carefully
handled and placed using rubber vacuum pencils. It
is highly recommended that the chips be utilised immediately
after unpacking; otherwise they should be stored
in a dry nitrogen atmosphere at temperatures between 15 and 35C.
IGBT chips are MOS controlled devices
and are thus electrostatic sensitive and should be handled
according to standard ESD procedures in ESD
protected equipment.
Recommended Assembly Instructions
Die Attach ABB chips have a backside metallisation consisting of
4 metallic layers (Al/Ti/Ni/Ag) suitable
for a soldered die attach. It is recommended that a lead-tin or
lead-tin-silver solder composition be used in for-
ming gas ambient at 300C, although other combinations may be
considered. Soldering temperatures should
not exceed 350C, or a plateau at 340 for more than 5 minutes.
Measures should be taken to avoid chip mis-
alignment as a result of floating during the process. Substrate
materials such as aluminium oxide, aluminium
nitride or DCB (direct copper bonding) with the co-efficients of
expansion closely matched to Silicon should be
used. Direct mounting onto Copper or Aluminium is also possible
via a bonded composite to control material
expansion/contraction.
Wire Bonding Chip top metallisation is finished in
aluminium-silicon suitable for standard ultrasonic wire
bonding processes. Aluminium (99.999) wire bonds are normally
used with the thickness and number of wire
bonds mainly dependent on the required current rating. During
the wire bonding process it is important to
protect against damage caused to the chips due to wire bond
misalignment, high contact pressure or resonant
vibrations of the substrate. This can cause damage to the gate
oxide layer or termination areas resulting in
failure.
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NPT
SPT
SPT
SPT
SPT
SPT
SPT
PT
PT
6.5 x 6.5
6.5 x 6.5
7.9 x 7.9
10.0 x 10.0
12.6 x 12.6
12.0 x 12.0
13.6 x 13.6
12.4 x 12.4
14.3 x 14.3
180
135
135
135
135
210
210
310
510
1200
1200
1200
1200
1200
1700
1700
2500
5200
25
25
50
75
100
75
100
50
55
50
50
100
150
200
150
200
100
110
2.7
2.2
2.1
2.1
2.1
2.6
2.6
2.7
4.2
3.0
2.5
5.0
7.5
10.0
19.0
26.0
80.0
3.5
3.0
5.5
8.5
11.0
25.0
33.0
120.0
MPS
MPS
MPS
MPS
3M
3M
SPEED
3M
7.0 x 7.0
7.8 x 7.8
9.3 x 9.3
12.6 x 6.8
11.9 x 6.1
13.6 x 6.8
12.4 x 12.4
14.3 x 14.3
325
325
325
325
370
370
290
570
1200
1200
1200
1200
1700
1700
2500
5200
50
75
100
100
75
100
110
70
1.9
1.9
1.9
1.9
2.0
2.0
1.8
2.5
40
55
70
70
66
85
50
65
9
13
18
18
19
25
65
100
400
400
400
400
600
600
Conditions
Tj= 125C, unless otherwise specified.
1) measured at IFN/ ICN(= nominal rated diode / IGBT
current)
2) for voltage classes:
- 1200V I = IFN
/ ICN
, VDC
= 600V, L
= 50nH, dj/dt = 1800A/ (cm2.s)
- 1700V I = IFN/ ICN , VDC= 900V, L= 160nH, dj /dt = 1100A/
(cm2.s)
- 2500V I = IFN/ ICN , VDC= 1250V, L= 2.4H, dj/dt =
80A/(cm2.s)
- 5200V I = IFN/ ICN , VDC= 2250V, L= 6H, dj/dt = 100A/
(cm2.s)
NB: dj/dt is the rate of fall of diode current density at IGBT
turn-on.
3) Under development. Please contact us for more data.
Other current ratings and voltage classes are available on
request.
Thickness
m
VCES
V
Type Size
mm
ICN
A
ICpulse
A
VCEsat1)
V
E OFF2)
mJ
EON2)
mJ
Part number
IGBTs
5SMX 12E1200
5SMX 12E1250
5SMX 12H1251
5SMX 12K1250
5SMX 12L1251
5SMX 12K1700
5SMX 12M1700
5SMX 12L2508
5SMX 12M5201
VRRM
V
IFN
A
VF1)
V
I rr2)
A
Q rr2)
C
t rr2)
ns
Diodes
5SLX 12E1200
5SLX 12F1200
5SLX 12H1200
5SLX 12H1201
5SLX 12G1700
5SLX 12H1700
5SLX 12L2508
5SLX 12M52003)
3)
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3CH-5600 Lenzburg / Switzerland
Phone +41 (58)586 1419
Telefax +41 (58)586 1306
E-Mail [email protected] www.abbsem.com
Worldwide:
ABB Semiconductors Inc.
575 Epsilon Drive
Pittsburgh, PA 15238 / USAPhone +1 (412)967 5858
Telefax +1 (412)967 5868
North America:
VDC
FWDDUT
I FN
L I CN
IGBTDUT
Doc.
No.
5SYA2033-01
April02
