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Parametrii Conditii LM741A/LM741E LM741 LM741C UnitsMin Uz Max Min Uz Max Min Uz Max
Tensiunea de offset TA = 25˚CRS 10 k RS
50 0.8 3.01.0 5.0 2.0 6.0 mV
mV
TAMIN TA TAMAX
RS
50 RS
10 k
4.06.0 7.5
mV mV
Domeniu de reglaj tensiune intrare
TA = 25˚C, VS = ±20V ±10 ±15 ±15 mV
Curentul de offset TA = 25˚C 3.0 30 20 200 20 200 nATAMIN TA TAMAX 70 85 500 300 nA
Curent de polarizare la intrare TA = 25˚C 30 80 80 500 80 500 nATAMIN TA TAMAX, 0.210 1.5 0.8 µA
Impedanta de intrare TA = 25˚C, VS = ±20V 1.0 6.0 0.3 2.0 0.3 2.0 MTAMIN TA
TAMAX, VS = 0.5 M
Domeniu tensiune de intrare TA = 25˚C ±12 ±13 VTAMIN TA TAMAX, ±12 ±13 V
Student: Avram BogdanGrupa: 8315
Amplificatorul Operational din seria LM741 (LM741A,LM741E,LM741, LM741C)
Caracteristici :
LM741A LM741E LM741 LM741C
Tensiune de alimentare ±22V ±22V ±22V ±18V
Putere disipata 500 mW 500 mW 500 mW 500 mW
Tensiune de intrare diferentiala ±30V ±30V ±30V ±30V
Tensiune de intrare ±15V ±15V ±15V ±15V
Temperaturi de functionare −55˚C to +125˚C 0˚C to +70˚C −55˚C to +125˚C 0˚C to +70˚C
Temperaturi de stocare −65˚C to +150˚C −65˚C to +150˚C −65˚C to +150˚C −65˚C to +150˚C
Temperatura jonctiunii 150˚C 100˚C 150˚C 100˚C
CARACTERISTICI ELECTRICE
Parametrul Conditii LM741A/LM741E LM741 LM741C UnitsMin Uz Max Min Uz Max Min Uz Max
Castigul in bucla deschisa TA = 25˚C, RL 2 k VS = ±20V, VO = ±15V VS = ±15V, VO = ±10V
5050 200 20 200
V/mV V/mV
TAMIN TA TAMAX,RL 2 k,VS = ±20V, VO = ±15V VS = ±15V, VO = ±10V VS = ±5V, VO = ±2V
32
1025 15
V/mV V/mV V/mV
Tensiunea de iesire VS = ±20VRL 10 kRL 2 k
±16±15
V V
VS = ±15VRL 10 k RL 2 k
±12±10
±14±13
±12±10
±14±13
V V
Curent de iesire in scurtcircuit
TA = 25˚CTAMIN TA TAMAX
1010
25 3540
25 25 mA mA
Rejectia modului comun
TAMIN TA TAMAX
RS 10 k, VCM = ±12V RS 50, VCM = ±12V 80 95
70 90 70 90 dB dB
Rata rejectie tensiune de alimentare
TAMIN TA TAMAX,
VS = ±20V to VS = ±5VRS 50 RS 10 k
86 9677 96 77 96
dB dB
Timp de raspunsEroare (abatere)
TA = 25˚C0.256.0
0.820
0.35
0.35
µs%
Latimea de banda TA = 25˚C 0.437 1.5 MHzViteza de variatie TA = 25˚C 0.3 0.7 0.5 0.5 V/µsCurent de alimentare TA = 25˚C 1.7 2.8 1.7 2.8 mAConsum de putere
LM741A
LM741E
LM741
TA = 25˚C VS = ±20V VS = ±15V
80 15050 85 50 85
mW mW
VS = ±20V TA = TAMIN
TA = TAMAX
165135
mW mW
VS = ±20V TA = TAMIN
TA = TAMAX
150150
mW mW
VS = ±15V TA = TAMIN
TA = TAMAX
6045
10075
mW mW
Student: Avram BogdanGrupa: 8315
CARACTERISTICI ELECTRICE (continuare)
Student: Avram BogdanGrupa: 8315
DIODA BA482; BA483; BA484
CARACTERISTICI :
Tensiunea de strapungere: max. 35 VIntensitatea c.c. transmis: max. 100 mACapacitatea electrica: max. 1.0 to 1.6 pFRezistenta: max. 0.7 to 1.2 .
UTILITATE : pentru tunere TV -VHF
VALORI LIMITATIVE – la randamente maxime
SIMBOL PARAMETRUL MIN. MAX. UNITVR tensiunea de strapungere (invers) 35 VIF Intensitatea curentului continuu transmis 100 mATstg temperatura de depozitare 65 +150 C
Tj temperatura de jonctiune 150 C
Caracteristici electrice
Tj = 25 (daca nu este specificat altfel)
SIMBOL PARAMETRUL CONDITII Valoare uzuala
MAX. UNIT
VF tensiunea transmisa IF = 100 mA 1.2 VIR Curentul de strapungere (invers) V
VR = 20 V; Tamb = 75 C
100 1
nAA
Cd Capacitatea electrica a diodei BA482BA483BA484
f = 1 to 100 MHz; VR = 3 V;0.80.71.0
1.21.01.6
pF pF pF
rD Rezistenta diodei
BA482BA483BA484
IF = 3 mA; f = 200 MHz; 0.60.80.8
0.71.21.2
Student: Avram BogdanGrupa: 8315
Tranzistor JFET 2N2608
Caracteristici statice Min Max Unit de masura
Conditii de testare
Tensiunea de cadere a sursei V(BR)GSS -30 - V IG = -1 uA, VDS = 0 V
Curentul invers IGSS - 10 nA VGS = 10 V, VDS = 0 V
Tensiune de saturatie (taiere) VGS(OFF) 1 4 V VDS = -10 V, VGS = 0 V
Curentul de saturatie IDSS -0.9 -4.5 mA VDS = -10 V, VGS = 0 V
Caracteristici dinamice
gfs 1-
mS VDS = -10 V, VGS = 0 V f = 1 Transconductanta sursei kHz
Capacitate circuit intrare Ciss- 17 pF VDS = -10 V, VGS = 1 V f = 1
MHzCapacitate de
Crss-
5 pF VDS = 10 V, ID = 5 mA f = 1transfer invers MHz
Tranzistor MOS FET 2SJ517Caracteristici statice Min Max Unit de
masura Conditii de testare
Tensiunea de cadere a sursei V(BR)GSS +/-10 - V IG = +/-100 uA, VDS = 0 V
Curentul invers IGSS - +/-10 μ A V VGS = +/-8 V, VDS = 0 V
Tensiune de saturatie (taiere) VGS(OFF) -0.5 -1.5 V IDS = -1 mA, VDS = -10 V
Curentul de saturatie IDSS - -10 μ A V VDS = -20 V, VGS = 0 V
Caracteristici dinamice
Capacitate circuit intrareCiss
- - pF VDS = -10 V, VGS = 0 V
Capacitate de Crss - - pF VDS = -10 V, VGS = 0 V
transfer invers
