4
No.6478-1/4 Features High speed. High breakdown voltage(V CBO =1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 1500 V Collector-to-Emitter Voltage V CEO 800 V Emitter-to-Base Voltage V EBO 6 V Collector Current I C 6 A Collector Current (Pulse) I CP 15 A Collector Dissipation P C 2.0 W Tc=25°C 30 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO V CE =800V, I E =0 10 μA Emitter Cutoff Current I CES V CE =1500V, R BE =0 1.0 mA Collector Sustain Voltage V CEO (sus) I C =100mA, I B =0 800 V Emitter Cutoff Current I EBO V EB =4V, I C =0 40 130 mA Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN6478A Package Dimensions unit : mm 2079D [2SD2627] D0301 TS IM TA-3427 / 91400 TS IM TA-2853 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Triple Diffused Planar Silicon Transistor 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) 16.0 14.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.2 0.9 0.75 0.6 1.2 4.5 2.8 1 2 3 10.0 3.2 Color TV Horizontal Deflection Output Applications 2SD2627LS

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2SD2627LS

No.6478-1/4

Features• High speed.• High breakdown voltage(VCBO=1500V).• High reliability(Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.

SpecificationsAbsolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO 1500 V

Collector-to-Emitter Voltage VCEO 800 V

Emitter-to-Base Voltage VEBO 6 V

Collector Current IC 6 A

Collector Current (Pulse) ICP 15 A

Collector Dissipation PC2.0 W

Tc=25°C 30 W

Junction Temperature Tj 150 °CStorage Temperature Tstg -55 to +150 °C

Electrical Characteristics at Ta=25°C

RatingsParameter Symbol Conditions

min typ maxUnit

Collector Cutoff Current ICBO VCE=800V, IE=0 10 µA

Emitter Cutoff Current ICES VCE=1500V, RBE=0 1.0 mA

Collector Sustain Voltage VCEO(sus) IC=100mA, IB=0 800 V

Emitter Cutoff Current IEBO VEB=4V, IC=0 40 130 mA

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor CompanyTOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6478A

Package Dimensionsunit : mm2079D

[2SD2627]

D0301 TS IM TA-3427 / 91400 TS IM TA-2853

Any and all SANYO products described or contained herein do not have specifications that can handleapplications that require extremely high levels of reliability, such as life-support systems, aircraft'scontrol systems, or other applications whose failure can be reasonably expected to result in seriousphysical and/or material damage. Consult with your SANYO representative nearest you before usingany SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or otherparameters) listed in products specifications of any and all SANYO products described or containedherein.

NPN Triple Diffused Planar Silicon Transistor

1 : Base2 : Collector3 : Emitter

SANYO : TO-220FI(LS)16

.014

.0

3.6

3.5

7.2

16.1

0.7

2.55 2.552.

4

1.20.9

0.75

0.6

1.2

4.52.8

1 2 3

10.0 3.2

Color TV Horizontal DeflectionOutput Applications

2SD2627LS

Page 2: 2SD2627LS.pdf

2SD2627LS

No.6478-2/4

Collector-to-Emitter Voltage, VCE -- V

Col

lect

or C

urre

nt, I

C -

- A

Collector Current, IC -- A

VCE(sat) -- IC

Col

lect

or-t

o-E

mitt

erSa

tura

tion

Vol

tage

, VC

E(s

at)

-- V

Collector Current, IC -- A

hFE -- IC

DC

Cur

rent

Gai

n, h

FE

Base-to-Emitter Voltage, VBE -- V

Col

lect

or C

urre

nt, I

C -

- A

0.13

0.1

1.0

2

3

5

2

3

5

7

5

7

2 3 5 7 2 3 5 71.0 10

3

2

1.0

10

0.1 1.0 102 3 5 7 2 3 5 7

5

7

3

2

5

-40°C25°C

Ta=120°C

VCE=5V IC / IB=5

25°C

Ta= --40°C

120°C

IT01810

IT01812

IT01811

IT01813

0 1 3 5 7 90

2 4 6 8

1

2

3

4

5

6

10

0.2A

0.05A

0.4A

0.6A

0.8A1.0A1.2A

1.4A

1.6A

1.8A

2.0A

IC -- VCE

IB=00.20 0.4 0.6 0.8 1.0 1.2 1.4

2

3

4

5

6

7

0

1

IC -- VBEVCE=5V

25°C

--40°

C

Ta=1

20°C

Continued from preceding page.

RatingsParameter Symbol Conditions

min typ maxUnit

Collector-to-Emitter Saturation Voltage VCE(sat) IC=3.15A, IB=0.63A 3 V

Base-to-Emitter Saturation Voltage VBE(sat) IC=3.15A, IB=0.63A 1.5 V

DC Current GainhFE1 VCE=5V, IC=0.5A 10

hFE2 VCE=5V, IC=3.5A 5 8

Diode Forward Voltage VF IEC=6A 2 V

Fall Time tf IC=2A, IB1=0.4A, IB2=--0.8A 0.3 µs

Switching Time Test Circuit

+ +

PW=20µsD.C.≤1%

50Ω

INPUT

RB

VRRL=100Ω

VCC=200VVBE= --2V

IB1

IB2

470µF100µF

OUTPUT

Page 3: 2SD2627LS.pdf

2SD2627LS

No.6478-3/4

Ambient Temperature, Ta -- °C

Col

lect

or D

issi

patio

n, P

C -

- W

PC -- Ta

Case Temperature, Tc -- °C

Col

lect

or D

issi

patio

n, P

C -

- W

PC -- Tc

00

20 40 60 80 100 120 140 160

3.0

0.5

1.0

1.5

2.0

2.5

IT01818

No heat sink

00

20 40 60 80 100 120 140 160

10

20

30

40

IT01819

Collector-to-Emitter Voltage, VCE -- V

Col

lect

or C

urre

nt, I

C -

- A

Collector-to-Emitter Voltage, VCE -- V

Reverse Bias A S O

Col

lect

or C

urre

nt, I

C -

- A

Forward Bias A S O

10 100 10000.1

1.0

10

2

3

5

7

2

3

2

3

5

7

2 3 5 72 3 5 7 2 3

IT01817

5L=500µHIB2= --1A

Tc=25°CSingle pulse

DC operation

1ms

10ms

300µsP

T =100µs

ICP=15A

IC=6A

PC =30W

Tc=25°CSingle pulse

0.01

0.1

1.0

107

23

5

235

7

235

7

235

1.0 10 100 10003 5 72 3 5 72 3 5 72

IT01816

Collector Current, IC -- A

Switc

hing

Tim

e, S

W T

ime

-- µ

sSW Time -- IC SW Time -- IB2

Base Current, IB2 -- A

Switc

hing

Tim

e, S

W T

ime

-- µ

s

0.1

1.0

5

0.1

7

5

3

2

3

2

5 1.0 102 3 7 52 3 7

IT01814

1.00.1 2 3 52 3 75

IT01815

1.0

0.1

5

3

2

7

5

3

2

7

10

tf

tstg

VCC=200VIC=2AIB1=0.4AR load

tf

tstgVCC=200VIC / IB1=5IB2 / IB1=2R load

Page 4: 2SD2627LS.pdf

2SD2627LS

No.6478-4/4

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guaranteesof the performance, characteristics, and functions of the described products as mounted in the customer'sproducts or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and allsemiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,or that could cause damage to other property. When designing equipment, adopt safety measures sothat these kinds of accidents or events cannot occur. Such measures include but are not limited to protectivecircuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or al l SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations,such products must not be expor ted without obtaining the expor t l icense from the authorit iesconcerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic ormechanical, including photocopying and recording, or any information storage or retrieval system,or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is notguaranteed for volume production. SANYO believes information herein is accurate and reliable, butno guarantees are made or implied regarding its use or any infringements of intellectual property rightsor other rights of third parties.

This catalog provides information as of December, 2001. Specifications and information herein are subject

to change without notice.

PS