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2SD2627LS
No.6478-1/4
Features• High speed.• High breakdown voltage(VCBO=1500V).• High reliability(Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.
SpecificationsAbsolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 1500 V
Collector-to-Emitter Voltage VCEO 800 V
Emitter-to-Base Voltage VEBO 6 V
Collector Current IC 6 A
Collector Current (Pulse) ICP 15 A
Collector Dissipation PC2.0 W
Tc=25°C 30 W
Junction Temperature Tj 150 °CStorage Temperature Tstg -55 to +150 °C
Electrical Characteristics at Ta=25°C
RatingsParameter Symbol Conditions
min typ maxUnit
Collector Cutoff Current ICBO VCE=800V, IE=0 10 µA
Emitter Cutoff Current ICES VCE=1500V, RBE=0 1.0 mA
Collector Sustain Voltage VCEO(sus) IC=100mA, IB=0 800 V
Emitter Cutoff Current IEBO VEB=4V, IC=0 40 130 mA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor CompanyTOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6478A
Package Dimensionsunit : mm2079D
[2SD2627]
D0301 TS IM TA-3427 / 91400 TS IM TA-2853
Any and all SANYO products described or contained herein do not have specifications that can handleapplications that require extremely high levels of reliability, such as life-support systems, aircraft'scontrol systems, or other applications whose failure can be reasonably expected to result in seriousphysical and/or material damage. Consult with your SANYO representative nearest you before usingany SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or otherparameters) listed in products specifications of any and all SANYO products described or containedherein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base2 : Collector3 : Emitter
SANYO : TO-220FI(LS)16
.014
.0
3.6
3.5
7.2
16.1
0.7
2.55 2.552.
4
1.20.9
0.75
0.6
1.2
4.52.8
1 2 3
10.0 3.2
Color TV Horizontal DeflectionOutput Applications
2SD2627LS
2SD2627LS
No.6478-2/4
Collector-to-Emitter Voltage, VCE -- V
Col
lect
or C
urre
nt, I
C -
- A
Collector Current, IC -- A
VCE(sat) -- IC
Col
lect
or-t
o-E
mitt
erSa
tura
tion
Vol
tage
, VC
E(s
at)
-- V
Collector Current, IC -- A
hFE -- IC
DC
Cur
rent
Gai
n, h
FE
Base-to-Emitter Voltage, VBE -- V
Col
lect
or C
urre
nt, I
C -
- A
0.13
0.1
1.0
2
3
5
2
3
5
7
5
7
2 3 5 7 2 3 5 71.0 10
3
2
1.0
10
0.1 1.0 102 3 5 7 2 3 5 7
5
7
3
2
5
-40°C25°C
Ta=120°C
VCE=5V IC / IB=5
25°C
Ta= --40°C
120°C
IT01810
IT01812
IT01811
IT01813
0 1 3 5 7 90
2 4 6 8
1
2
3
4
5
6
10
0.2A
0.05A
0.4A
0.6A
0.8A1.0A1.2A
1.4A
1.6A
1.8A
2.0A
IC -- VCE
IB=00.20 0.4 0.6 0.8 1.0 1.2 1.4
2
3
4
5
6
7
0
1
IC -- VBEVCE=5V
25°C
--40°
C
Ta=1
20°C
Continued from preceding page.
RatingsParameter Symbol Conditions
min typ maxUnit
Collector-to-Emitter Saturation Voltage VCE(sat) IC=3.15A, IB=0.63A 3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=3.15A, IB=0.63A 1.5 V
DC Current GainhFE1 VCE=5V, IC=0.5A 10
hFE2 VCE=5V, IC=3.5A 5 8
Diode Forward Voltage VF IEC=6A 2 V
Fall Time tf IC=2A, IB1=0.4A, IB2=--0.8A 0.3 µs
Switching Time Test Circuit
+ +
PW=20µsD.C.≤1%
50Ω
INPUT
RB
VRRL=100Ω
VCC=200VVBE= --2V
IB1
IB2
470µF100µF
OUTPUT
2SD2627LS
No.6478-3/4
Ambient Temperature, Ta -- °C
Col
lect
or D
issi
patio
n, P
C -
- W
PC -- Ta
Case Temperature, Tc -- °C
Col
lect
or D
issi
patio
n, P
C -
- W
PC -- Tc
00
20 40 60 80 100 120 140 160
3.0
0.5
1.0
1.5
2.0
2.5
IT01818
No heat sink
00
20 40 60 80 100 120 140 160
10
20
30
40
IT01819
Collector-to-Emitter Voltage, VCE -- V
Col
lect
or C
urre
nt, I
C -
- A
Collector-to-Emitter Voltage, VCE -- V
Reverse Bias A S O
Col
lect
or C
urre
nt, I
C -
- A
Forward Bias A S O
10 100 10000.1
1.0
10
2
3
5
7
2
3
2
3
5
7
2 3 5 72 3 5 7 2 3
IT01817
5L=500µHIB2= --1A
Tc=25°CSingle pulse
DC operation
1ms
10ms
300µsP
T =100µs
ICP=15A
IC=6A
PC =30W
Tc=25°CSingle pulse
0.01
0.1
1.0
107
23
5
235
7
235
7
235
1.0 10 100 10003 5 72 3 5 72 3 5 72
IT01816
Collector Current, IC -- A
Switc
hing
Tim
e, S
W T
ime
-- µ
sSW Time -- IC SW Time -- IB2
Base Current, IB2 -- A
Switc
hing
Tim
e, S
W T
ime
-- µ
s
0.1
1.0
5
0.1
7
5
3
2
3
2
5 1.0 102 3 7 52 3 7
IT01814
1.00.1 2 3 52 3 75
IT01815
1.0
0.1
5
3
2
7
5
3
2
7
10
tf
tstg
VCC=200VIC=2AIB1=0.4AR load
tf
tstgVCC=200VIC / IB1=5IB2 / IB1=2R load
2SD2627LS
No.6478-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guaranteesof the performance, characteristics, and functions of the described products as mounted in the customer'sproducts or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and allsemiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,or that could cause damage to other property. When designing equipment, adopt safety measures sothat these kinds of accidents or events cannot occur. Such measures include but are not limited to protectivecircuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or al l SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations,such products must not be expor ted without obtaining the expor t l icense from the authorit iesconcerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic ormechanical, including photocopying and recording, or any information storage or retrieval system,or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is notguaranteed for volume production. SANYO believes information herein is accurate and reliable, butno guarantees are made or implied regarding its use or any infringements of intellectual property rightsor other rights of third parties.
This catalog provides information as of December, 2001. Specifications and information herein are subject
to change without notice.
PS